Semi-conductors based on arsenide and antimony, mixed v group four and five element alloys; semiconductors, including superlattice structures, and high electron mobility transistors structures; infrared wave semiconductor lasers for non-medical purposes; long-wave infrared spectral band lasers with rectangular, ridge or rib waveguide based on aluminum, gallium, indium, arsenic and antimony for industrial use; surface-emitting lasers not for medical use; infrared lasers not for medical use; qu...

Semi-conductors based on arsenide and antimony, mixed v group four and five element alloys; semiconductors containing superlattice structures and high electron mobility transistors structures; infrared wave semiconductor lasers for non-medical purposes; long-wave infrared spectral band lasers with a radial waveguide gasb based on gallium and antimony for industrial use; surface-emitting lasers not for medical use; infrared lasers not for medical use; thermo-photovoltaic cells; quantum well in...

Semi-conductors based on arsenide and antimony, mixed v group four and five element alloys; semiconductors, including superlattice structures, infrared wave semiconductor lasers for non-medical purposes; longwave infrared spectral band lasers not for medical use; infrared lasers not for medical use; photodiodes; p-i-n photodiodes; lasers for industrial use; lasers for measuring purposes; lasers for scientific use; optical semiconductor amplifiers; semiconductor apparatus; semiconductor chips;...